BE SOI MOSFET: A very simple reconfigurable SOI transistor

A reconfigurable transistor that can act both as a ntype and as a p-type MOSFET presents a flexibility of operation that may enable better circuit design [1]. Many options use sophisticated fabrication processes and architectures such as nanowires [2,3,4] to obtain a reconfigurable transistor. There are papers that report simulation results [5,6] for this kind of device. In this work we introduce the new BE SOI MOSFET , a device with very simple fabrication processes, no doping step is needed, just conventional photolithography and metal depositions are used [7,8] and has the reconfigurable property. The BE SOI MOSFET was fabricated at Integrated System Laboratory (LSI) from University of São Paulo (USP), Brazil. It was processed on a 200nm thickness buried oxide SOI wafer with only three conventional photolithography steps and no doping process (the natural doping concentration is 10cm). The final silicon layer and the gate oxide thickness are 10nm each. The source and drain Shottky contacts were made with nickel and the metal gate with aluminum. Fig. 1 shows the schematic profile of this planar device and the picture of the fabricated device can be seen in fig. 2.